 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NPN Silicon AF Transistors BC 817 BC 818 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 (PNP) Type BC 817-16 BC 817-25 BC 817-40 BC 818-16 BC 818-25 BC 818-40 Marking 6As 6Bs 6Cs 6Es 6Fs 6Gs Ordering Code Q62702-C1732 Q62702-C1690 Q62702-C1738 Q62702-C1739 Q62702-C1740 Q62702-C1505 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BC 817 BC 818 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS Symbol BC 817 VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg 45 50 5 Values BC 818 25 30 5 500 1 100 200 330 150 - 65 ... + 150 Unit V mA A mA mW C Total power dissipation, TC = 79 C Ptot 285 215 K/W 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 817 BC 818 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 817 BC 818 Collector-base breakdown voltage IC = 100 A BC 817 BC 818 Emitter-base breakdown voltage, IE = 10 A Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 mA; VCE = 1 V BC 817-16, BC 818-16 BC 817-25, BC 818-25 BC 817-40, BC 818-40 IC = 300 mA; VCE = 1 V BC 817-16, BC 818-16 BC 817-25, BC 818-25 BC 817-40, BC 818-40 Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter saturation voltage1) IC = 500 mA; IB = 50 mA AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz 1) Values typ. max. Unit V(BR)CE0 45 25 V(BR)CB0 50 30 V(BR)EB0 ICB0 - - IEB0 hFE 100 160 250 60 100 170 VCEsat VBEsat - - 160 250 350 - - - - - 250 400 630 - - - 0.7 2 - - - - 100 50 100 5 - - - - - - - - - - V nA A nA - V fT Cobo Cibo - - - 170 6 60 - - - MHz pF Pulse test: t 300 s, D 2 %. Semiconductor Group 3 BC 817 BC 818 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V Permissible pulse load Ptot max/Ptot DC = f (tp) Collector cutoff current ICB0 = f (TA) VCB0 = 60 V Semiconductor Group 4 BC 817 BC 818 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 5 |
Price & Availability of BC818-16
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |